X-ray diffraction study of undercooled molten silicon

被引:68
|
作者
Kimura, H [1 ]
Watanabe, M
Izumi, K
Hibiya, T
Holland-Moritz, D
Schenk, T
Bauchspiess, KR
Schneider, S
Egry, I
Funakoshi, K
Hanfland, M
机构
[1] NEC Corp Ltd, Fundamental Res Labs, Syst Devices & Fundamental Res, Tsukuba, Ibaraki 3058501, Japan
[2] DLR, Inst Raumsimulat, D-51170 Cologne, Germany
[3] Japan Synchrotron Radiat Res Inst, Sayo 6795198, Japan
[4] European Synchrotron Radiat Facil, F-38043 Grenoble, France
关键词
D O I
10.1063/1.1341220
中图分类号
O59 [应用物理学];
学科分类号
摘要
The short-range order of molten silicon was investigated in a wide temperature range from 1893 K down to 1403 K, corresponding to an undercooling of 290 K. Energy-dispersive x-ray diffraction was used in combination with electromagnetic levitation. The structure factor and the pair correlation function were determined as a function of temperature from the experimental data. A small hump on the higher wave vector side of the first peak in the structure factor was observed at all temperatures. The position of the first peak in the pair distribution function shifted to shorter distances and its height increased gradually with decreasing temperature. No discontinuous behavior was observed in the entire temperature range investigated. (C) 2001 American Institute of Physics.
引用
收藏
页码:604 / 606
页数:3
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