A study of nitrogen ion implantation in GaAs: A comparison of experimental results and computer simulations

被引：0
|
作者：
Sanghera, HK [1 ]
Sullivan, JL [1 ]
机构：
[1] Aston Univ, EEAP, Birmingham, W Midlands, England
来源：
ECASIA 97: 7TH EUROPEAN CONFERENCE ON APPLICATIONS OF SURFACE AND INTERFACE ANALYSIS | 1997年
关键词：
D O I：
暂无
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：452 / 455
页数：4
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