Minority carrier diffusion length for electrons in an extended SWIR InAs/AlSb type-II superlattice photodiode

被引：26

作者：

Cohen-Elias, D. ^{[1
]}

Snapi, N. ^{[2
]}

Klin, O. ^{[2
]}

Weiss, E. ^{[2
]}

Shusterman, S. ^{[1
]}

Meir, T. ^{[1
]}

Katz, M. ^{[1
]}

机构：

[1] Soreq NRC, Appl Phys Div, Solid State Phys Dept, IL-81800 Yavne, Israel

[2] SCD Semicond Devices, POB 2250, IL-31021 Haifa, Israel

来源：

APPLIED PHYSICS LETTERS | 2017年 / 111卷 / 20期

关键词：

DETECTORS;

D O I：

10.1063/1.5005097

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We fabricated and characterized InAs/AlSb Type II superlattice photodetectors for the short wave infrared region with lambda(cutoff) close to 2.5 mu m. Using C-V and quantum efficiency measurements, we extracted the carrier diffusion lengths, L-diff, and at 220 K and 300 K, they were 0.94 mu m and 1.9 mu m, respectively. In addition, I-V and detectivity measurements were carried out. The quantum efficiencies at lambda = 2.18 mu m, -50 mV, 300 K, and 200 K were 29% and 16% and the detectivities were above 10(10) and 2 X 10(11) cm Hz(1/2)/Watt, respectively. At a bias of -50 mV, the dark current densities at 300 K and 200 K were 4 mA/cm(2) and 2.3 X 10(-6) A/cm(2) and the resistance-areas were 16 Omega cm(2) and 38 k Omega cm(2), respectively. Published by AIP Publishing.

引用

页数：4

共 50 条

[31] Vertical minority carrier electron transport in p-type InAs/GaSb type-II superlattices
Umana-Membreno, G. A.
Klein, B.
Kala, H.
Antoszewski, J.
Gautam, N.
Kutty, M. N.
Plis, E.
Krishna, S.
Faraone, L.
APPLIED PHYSICS LETTERS, 2012, 101 (25)
[32] Aspects of Type-II Superlattice Infrared Detectors: Minority Carrier Lifetimes and Conductivity Effective Masses
Ting, David Z.
Hoglund, Linda
Soibel, Alexander
Khoshakhlagh, Arezou
Keo, Sam A.
Fisher, Anita M.
Rafol, Sir B.
Luong, Edward M.
Hill, Cory J.
Mumolo, Jason M.
Liu, John K.
Pepper, Brian J.
Gunapala, Sarath D.
30TH ANNUAL CONFERENCE OF THE IEEE PHOTONICS SOCIETY (IPC), 2017, : 161 - 162
[33] GaSb for passivating type-II InAs/GaSb superlattice mesas
Szmulowicz, F.
Brown, G. J.
INFRARED PHYSICS & TECHNOLOGY, 2010, 53 (05) : 305 - 307
[34] High performance type-II InAs/GaSb superlattice photodiodes
Mohseni, H
Wei, YJ
Razeghi, M
PHOTODETECTORS: MATERIALS AND DEVICES VI, 2001, 4288 : 191 - 199
[35] Type-II InAs/GaSb superlattice grown on InP substrate
Miura, K.
Iguchi, Y.
Kawamura, Y.
JOURNAL OF CRYSTAL GROWTH, 2013, 378 : 121 - 124
[36] Multiphoton absorption in type-II InAs/GaSb superlattice structure
Zhao, Chengcheng
Huang, Jianliang
Nie, Biying
Zhang, Jinchuan
Zhang, Yanhua
Ma, Wenquan
OPTICS LETTERS, 2020, 45 (01) : 165 - 168
[37] Improved performances InAs/AlSb Type-II superlattice photodiodes for eSWIR with Ldiff of 2.4 μm and QE of 38% at 300 K
Shafir, I
Cohen-Elias, D.
Snapi, N.
Klin, O.
Weiss, E.
Sicron, N.
Katz, M.
INFRARED PHYSICS & TECHNOLOGY, 2020, 105
[38] Vertical Hole Transport and Carrier Localization in InAs/InAs1-xSbx Type-II Superlattice Heterojunction Bipolar Transistors
Olson, B. V.
Klem, J. F.
Kadlec, E. A.
Kim, J. K.
Goldflam, M. D.
Hawkins, S. D.
Tauke-Pedretti, A.
Coon, W. T.
Fortune, T. R.
Shaner, E. A.
Flatte, M. E.
PHYSICAL REVIEW APPLIED, 2017, 7 (02):
[39] Measurement of the steady-state minority carrier diffusion length in a HgCdTe photodiode
Jung, Han
Lee, Hee Chul
Kim, Choong-Ki
Japanese Journal of Applied Physics, Part 2: Letters, 1996, 35 (10 B):
[40] Measurement of the steady-state minority carrier diffusion length in a HgCdTe photodiode
Jung, H
Lee, HC
Kim, CK
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (10B): : L1321 - L1323

← 1 2 3 4 5 →