Improved electric properties of Nd-doped BiFeO3 thin films prepared by metal organic decomposition method

被引：4
|
作者：
Huang, Fengzhen [1 ]
Lu, Xiaomei [1 ]
Wang, Zhe [1 ]
Xu, Shu [1 ]
Wu, Xiumei [1 ]
Zhu, Jinsong [1 ]
机构：
[1] Nanjing Univ, Natl Lab Solid State Microstruct, Dept Phys, Nanjing 210093, Peoples R China
来源：
INTEGRATED FERROELECTRICS | 2008年 / 96卷
基金：
美国国家科学基金会;
关键词：
BiFeO3 thin films; ferroelectric; metal organic decomposition;
D O I：
10.1080/10584580802101216
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Polycrystalline BiFeO3 (BFO) and Bi-0.9 Nd-0.1 FeO3 thin films were prepared by a simple MOD method on (111) Pt/Ti/SiO2/Si substrates. The effect of Nd dopant on the electric properties of BFO was studied. It was found that Nd doping in BFO film reduced the leakage current due to the decreased oxygen vacancies and Fe2+ fraction, and thus enhanced the ferroelectric and dielectric characteristics. Meanwhile, the conduction mechanisms of our films were space-charge limited in lower electric field and Ohmic in higher electric field.
引用
收藏
页码：112 / 119
页数：8
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