Influences of pre-oxidation nitrogen implantation and post-oxidation annealing on channel mobility of 4H-SiC MOSFETs

被引：4

作者：

Fei, Chenxi ^{[1
]}

Bai, Song ^{[1
]}

Wang, Qian ^{[1
]}

Huang, Runhua ^{[1
]}

He, Zhiqiang ^{[1
]}

Liu, Hao ^{[1
]}

Liu, Qiang ^{[1
]}

机构：

[1] Nanjing Elect Devices Inst, State Key Lab Wide Bandgap Semicond Power Elect D, 166 Zheng Fang Middle Rd, Nanjing, Jiangsu, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2020年 / 531卷

关键词：

Silicon carbide; Channel mobility; Oxidation; Annealing; Implantation; VOLTAGE; SIO2;

D O I：

10.1016/j.jcrysgro.2019.125338

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Detailed investigations on the pre-oxidation nitrogen implantation and post-oxidation annealing processes for the improvement of channel mobility and specific on-resistance in 4H-SiC MOSFETs are reported. The results indicate that higher temperature and time for NO nitridation annealing process lead to higher field-effect channel mobility and lower specific on-resistance attributed to the good interface properties of SiC and SiO2 of MOSFETs. Furthermore, more nitrogen implantation energy and dose improved the channel mobility and specific on-resistance due to higher I-d and less fixed charge, traps, and defects at the SiO2/SiC interface. The threshold voltages and blocking performance of MOSFETs are influenced by pre-oxidation nitrogen implantation conditions attributed to changing of counter doping mechanism in the DMOSFET p-well.

引用

页数：6

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