Electrodeposition of anisotropic NiFe thin films for integrated high-frequency micro-inductor

被引:0
|
作者
Yang, Lin-Lin [1 ,2 ]
Gao, Li-Yin [2 ]
Chen, Chunhuan [1 ]
Liu, Zhi-Quan [2 ]
机构
[1] Dalian Jiaotong Univ, Sch Mat Sci & Engn, Dalian 116024, Peoples R China
[2] Chinese Acad Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China
关键词
micro-inductor; NiFe thin film; in-plane anisotropy; magnetic electroplating; MAGNETIC-FIELD;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
NiFe thin films were fabricated on wafer by applying 100mT external magnetic field during electroplating, and the function of in-plane parallel magnetic field in the course of the plating experiment and magnetic properties have been studied in this paper. Magnetic measurements show that in-plane anisotropy field can be abtained by magnet-electroplating, and the magnetic properties are very sensitive to the thickness of film. The Ni70Fe30 film with thickness of both 0.6 mu m and 1.2 mu m exhibit significantly uniaxial surface anisotropy and the complex permeability of the direction of parallel magnetic field can reach about 220 while 2 mu m NiFe thin film does not have a uniaxial magnetic anisotropy. The results also show that the ferromagnetic-resonance frequency(FMR) can run up to 500Mz when the thickness is suitable, which is an essential performance in the design of micro-inductor devices.
引用
收藏
页码:1241 / 1245
页数:5
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