Si-based nanoscale SiO2 islands and light-emitting source array

A SiO2 nanoscale island array was fabricated on a Si substrate by using anodic porous alumina as a mask. Transmission electron microscopy observation and the atomic force microscopy pattern show that the arrangement Of SiO2 islands has a quasi-hexagonal symmetry. Ge ions with a dose of 1 x 10(17) cm(-2) were subsequently implanted into the SiO2 island array to form Ge-related light-emitting centers. The photoluminescence (PL) spectra of as-implanted and annealed samples show three PL bands at 370, 400 and 415 nm. Their intensities reach maximums in the sample with an annealing temperature of 700 degreesC. Spectral analysis suggests that the 370 and 415 nm PL bands arise from = Ge-Ge = and = Ge-Si defect centers, while the 400 nm PL is related to GeO color centers in the SiO2 islands. The existence of these PL bands indicates the formation of a Si-based nanoscale light source array.