UV excimer laser annealing for next generation power electronics

被引：0

作者：

Tabata, Toshiyuki ^{[1
]}

Halty, Sebastien ^{[1
]}

Toque-Tresonne, Ines ^{[1
]}

Mazzamuto, Fulvio ^{[1
]}

Huet, Karim ^{[1
]}

Mori, Yoshihiro ^{[1
]}

机构：

[1] SCREEN Semicond Solut Co Ltd, Laser Syst & Solut Europe LASSE, Gennevilliers, France

来源：

2016 21ST INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT) | 2016年

关键词：

laser annealing; power device; IGBT; SiC; ION-IMPLANTATION; OHMIC CONTACT; NI;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Advanced processes for next generation power devices have been studied in this paper. For silicon (Si)-IGBT applications, a near-perfect deep activation of over 4 mu m depth has been demonstrated in a phosphorous (Ph) doped Si wafer. In addition, progresses of epitaxial regrowth and ohmic contact formation on a silicon-carbide (SiC) wafer have been reported.

引用

页数：4

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