Characteristics of Ce-Zr mixed oxide films as buffer layer by controlling composition

被引：1
|
作者：
Lee, HY [1 ]
Kim, SI [1 ]
Lee, YC [1 ]
Hong, YP [1 ]
Ko, KH [1 ]
机构：
[1] Ajou Univ, Suwon 441749, South Korea
来源：
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 2003年 / 13卷 / 02期
关键词：
D O I：
10.1109/TASC.2003.811944
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
YSZ films have been widely used as buffer layers for high T. superconductor. However, it is necessary to investigate and develop another buffer layer with suitable, simple, and neat processing. Films of Ce-Zr mixed oxide were deposited by rf and do magnetron co-sputtering. In sputtering process, do power of Zr was fixed in 200 W while rf power of Ce was varied with 30 W, 50 W, 100 W, respectively. As-deposited (CexZr1-x)O-2 films were crystallized without post annealing. It was confirmed that the composition of the films could be controlled with controlling rf power of Ce target. The Phi scan of XRD showed that all (CexZr1-x)O-2 films were (200) c-axis oriented. Three consecutive magnetron sputtering procedure for seed, CZO and cap layer for HTSC films using Ce, Zr and CeO2 target were carried out on the Si(100) and Ni substrate successfully. It is suggested that sputtered and c-axis oriented (CexZr1-x)O-2 films can be a potential candidate to replacing YSZ buffer layer.
引用
收藏
页码：2665 / 2668
页数：4
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