Photoreflectance analysis of a GaInP/GaInAs/Ge multijunction solar cell

被引：21

作者：

Canovas, E. ^{[1
]}

Fuertes Marron, D. ^{[1
]}

Marti, A. ^{[1
]}

Luque, A. ^{[1
]}

Bett, A. W. ^{[2
]}

Dimroth, F. ^{[2
]}

Philipps, S. P. ^{[2
]}

机构：

[1] Univ Politecn Madrid, Inst Energia Solar, ETSI Telecomunicac, E-28040 Madrid, Spain

[2] Fraunhofer Inst Solar Energy Syst, D-79110 Freiburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 20期

关键词：

GAAS; ELECTROREFLECTANCE; SPECTROSCOPY;

D O I：

10.1063/1.3517255

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have analyzed the photoreflectance spectra of a GaInP/GaInAs/Ge triple junction solar cell. The spectra reveal signatures from the window layer and middle and top subcells included in the stack. Additional contributions from the multilayer buffer introduced between the mismatched bottom and middle cells have been detected. Franz-Keldysh oscillations (FKOs) dominate the spectra above the fundamental bandgaps of the GaInP and GaInAs absorbers. From the FKO analysis, we have estimated the dominant electric fields within each subcell. In light of these results, photoreflectance is proposed as a useful diagnostic tool for quality assessment of multijunction structures prior to completion of the device or at earlier stages during its processing. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3517255]

引用

页数：3

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