SIMS study on redistribution of implanted impurities in InSb and InAs during post-implantation annealing

The concentration profiles of beryllium and magnesium implanted in InSb and InAs at an energy of 200 keV and a dose of 10(15) cm(-2) of beryllium and a dose of 5 x 10(14) cm(-2) of magnesium were investigated by SIMS analysis, in samples as-implanted and annealed at 300 degrees C-800 degrees C for InAs or at 300 degrees C-450 degrees C for InSb. It is found that in InSb samples the magnesium profiles did not broaden up to 350 degrees C, but beryllium profiles did not even change up to 450 degrees C. In InAs modification of the beryllium profiles in comparison with InSb occurred at relatively low temperatures about 400 degrees C and an increase of annealing temperature from 400 degrees C to 700 degrees C resulted in a severe distortion of the original profile. At temperatures above 700 degrees C a gettering layer in the region near R(p) resulted from the agglomeration of radiation defects, This layer acted as a sink of diffused beryllium.