Research on synchronization of 15 parallel high gain photoconductive semiconductor switches triggered by high power pulse laser diodes

被引:45
|
作者
Wang, Wei [1 ]
Xia, Liansheng [1 ]
Chen, Yi [1 ]
Liu, Yi [1 ]
Yang, Chao [1 ]
Ye, Mao [1 ]
Deng, Jianjun [1 ]
机构
[1] Inst Fluid Phys, Mianyang 621999, Peoples R China
关键词
D O I
10.1063/1.4906035
中图分类号
O59 [应用物理学];
学科分类号
摘要
The synchronization of 15 parallel high gain gallium arsenide photoconductive semiconductor switches (GaAs PCSS) has been researched aiming to get higher output voltage. Each PCSS is triggered independently by a high power pulse laser diode. The pulse width, energy, peak power, and central wavelength of the laser pulse are approximately 18 ns, 360 mu J, 20 kW, and 905 nm, respectively. In the stacked Blumlein transmission lines structure, the synchronous conduction of 15 parallel GaAs PCSSs has been achieved by offering optimized bias voltage and laser parameters. The method of synchronization calculation is given, and the synchronization of the 15 parallel GaAs PCSSs is measured as 775 ps. Furthermore, influences of the bias voltage, laser parameters on the synchronization are analyzed. In the output terminal, superimposed by the output voltages of 15 Blumlein transmission lines, the total output voltage reaches up to 328 kV, which is the highest output voltage of GaAs PCSSs that has been reported so far. (C) 2015 AIP Publishing LLC.
引用
收藏
页数:4
相关论文
共 50 条
  • [41] Characteristics of trap-filled GaAs photoconductive switches used in high gain pulsed power applications
    Islam, NE
    Schamiloglu, E
    Mar, A
    Zutavern, F
    Loubriel, GM
    Joshi, RP
    [J]. ULTRA-WIDEBAND, SHORT-PULSE ELECTROMAGNETICS 5, 2002, : 461 - 466
  • [42] Reliability Considerations for Parallel Performance of Semiconductor Switches in High-Power Switching Power Supplies
    Abdi, Babak
    Ranjbar, Amir Hossein
    Gharehpetian, Gevorg B.
    Milimonfared, Jafar
    [J]. IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 2009, 56 (06) : 2133 - 2139
  • [43] High Power Ultra Wideband Short Pulse (UWBSP) Electromagnetics (EM) Application For Wide Band Gap (WBG) Photoconductive Semiconductor Switches (PCSS)
    Wolfe, T.
    Francis, S.
    Langley, D.
    Petrosky, J.
    Terzuoli, A.
    Zens, T.
    [J]. PROCEEDINGS OF THE 2015 INTERNATIONAL CONFERENCE ON ELECTROMAGNETICS IN ADVANCED APPLICATIONS (ICEAA), 2015, : 1500 - 1503
  • [44] High pulse power wavelength stabilized laser diodes for automotive LiDAR
    Knigge, A.
    Klehr, A.
    Wenzel, H.
    Zeghuzi, A.
    Fricke, J.
    Maassdorf, A.
    Liero, A.
    Traenkle, G.
    [J]. 2018 IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC), 2018, : 225 - 226
  • [45] High-power nanosecond pulse generators based on semiconductor opening switches (review)
    Rukin, SN
    [J]. INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 1999, 42 (04) : 439 - 467
  • [46] Step recovery diodes pulse generator in the high power laser system
    Hang, Hai
    Ouyang, Xian
    Liu, Bai-Yu
    Yang, Wen-Zheng
    Hou, Xun
    [J]. Guangzi Xuebao/Acta Photonica Sinica, 2007, 36 (05): : 777 - 779
  • [47] Wavelength stabilized high pulse power laser diodes for automotive LiDAR
    Knigge, A.
    Klehr, A.
    Wenzel, H.
    Zeghuzi, A.
    Fricke, J.
    Maassdorf, A.
    Liero, A.
    Traenkle, G.
    [J]. HIGH-POWER DIODE LASER TECHNOLOGY XVI, 2018, 10514
  • [48] Research on High Power Pulse Combined Fiber Laser
    Tan Xiaomei
    Liu Yun
    Li Wentao
    [J]. LASER & OPTOELECTRONICS PROGRESS, 2022, 59 (11)
  • [49] Low-Voltage AlGaAs/GaAs Thyristors as High-Peak-Current Pulse Switches for High-Power Semiconductor Laser Pumping
    Slipchenko, Sergey O.
    Podoskin, Aleksandr A.
    Golovin, Vyacheslav S.
    Gavrina, Polina S.
    Shamakhov, Victor V.
    Nikolaev, Dmitriy N.
    Zolotarev, Vasilii V.
    Pikhtin, Nikita A.
    Bagaev, Timur A.
    Ladugin, Maxim A.
    Marmalyuk, Aleksandr A.
    Simakov, Vladimir A.
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (01) : 193 - 197
  • [50] A HIGH-POWER PACKET-PULSE SEMICONDUCTOR STREAMER LASER
    GRIBKOVSKII, VP
    PARASHCHUK, VV
    YABLONSKII, GP
    [J]. KVANTOVAYA ELEKTRONIKA, 1989, 16 (06): : 1145 - 1148