Structural and electrical properties of Fe-doped TiO2 thin films

被引：167
|
作者：
Bally, AR [1 ]
Korobeinikova, EN
Schmid, PE
Levy, F
Bussy, F
机构：
[1] Ecole Polytech Fed Lausanne, Inst Phys Appl, CH-1015 Lausanne, Switzerland
[2] Inst Crystallog, Kaluga 248033, Russia
[3] Univ Lausanne, Inst Mineral, CH-1015 Lausanne, Switzerland
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1998年 / 31卷 / 10期
关键词：
D O I：
10.1088/0022-3727/31/10/004
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The present study discusses the effect of iron doping in TiO2 thin films deposited by rf sputtering. Iron doping induces a structural transformation from anatase to rutile and electrical measurements indicate that iron acts as an acceptor impurity. Thermoelectric power measurement shows a transition between n-type and p-type electrical conduction for an iron concentration around 0.13 at.%. The highest p-type conductivity at room temperature achieved by iron doping was 10(-6) S m(-1).
引用
收藏
页码：1149 / 1154
页数：6
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