Photodiode dopant structure with atomically flat Si surface for high-sensitivity and stability to UV light

被引：6
|
作者：
Nakazawa, Taiki [1 ]
Kuroda, Rihito [1 ]
Koda, Yasumasa [1 ]
Sugawa, Shigetoshi [1 ]
机构：
[1] Tohoku Univ, Grad Sch Engn, Aoba Ku, Sendai, Miyagi 9808579, Japan
来源：
SENSORS, CAMERAS, AND SYSTEMS FOR INDUSTRIAL AND SCIENTIFIC APPLICATIONS XIII | 2012年 / 8298卷
关键词：
photodiode; UV-light; atomically flat Si surface; TECHNOLOGIES;
D O I：
10.1117/12.907727
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, n(+)pn-type photodiodes with various surface n(+) layer profiles formed on the atomically flat Si surface were evaluated to investigate the relationships between the surface photo-generated carrier drift layer dopant profiles with a high uniformity and sensitivity and stability to UV-light. The degradation mechanism of photodiode sensitivitiy in UV-light wavelength due to UV-light exposure is explained by the changes in the fixed charges and the interface states at Si/SiO2 system above photodiode. Finally, a design strategy of photodiode dopant profile to achieve a high sensitivity and a high stability to UV-light is proposed.
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页数：8
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