Self-Consistent Quasi-Static C-V characteristics of In1-xGaxSb XOI FET

被引：0

作者：

Alam, Md. Nur Kutubul ^{[1
]}

Islam, Muhammad Shaffatul ^{[1
]}

Islam, Md. Raifqul ^{[1
]}

机构：

[1] Khulna Univ Engn & Technol, Dept Elect & Elect Engn, Khulna, Bangladesh

来源：

2013 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2013年

关键词：

CV characteristics; InGaSb XOI nFET; self-consistent analysis; quasi-static CV;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In1-xGaxSb XOI nFET is proposed and its capacitance-voltage ( CV) characteristics are investigated. One dimensional coupled Schrodinger-Poisson equation is solved to calculate charge and hence to the capacitance. Well known SILVACO's ATLAS device simulation package is used to carry out the simulation. It is found that the CV characteristic as well as the threshold voltage of the proposed device depend on different process parameters like doping concentration, channel composition, channel thickness, gate oxide and oxide thickness, and operating temperature. Doping dependent threshold voltage shift is related with maximum allowable doping level, and which is also important for understanding enhancement mode operation.

引用

页数：2