Study of ZrO2/Al2O3/ZrO2 and Al2O3/ZrO2/Al2O3 Stack Structures Deposited by Sol-Gel Method on Si

被引：3

作者：

Vitanov, P. ^{[1
]}

Harizanova, A. ^{[1
]}

Ivanova, T. ^{[1
]}

Dimitrova, T. ^{[2
]}

机构：

[1] Bulgarian Acad Sci, Cent Lab Solar Energy & New Energy Sources, Blvd Tzarigradsko Chaussee 72, Sofia, Bulgaria

[2] Four Dimens Inc, Hayward, CA USA

来源：

FUNDAMENTALS AND TECHNOLOGY OF MULTIFUNCTIONAL OXIDE THIN FILMS (SYMPOSIUM G, EMRS 2009 SPRING MEETING) | 2010年 / 8卷

关键词：

FILMS; LAYER;

D O I：

10.1088/1757-899X/8/1/012027

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Based on our previous experience with pseudobinary alloys of (Al2O3)(x)(ZrO2)(1-x) as high-k materials and passivating coatings for solar cells, stack systems of ZrO2/Al2O3/ZrO2 and Al2O3/ZrO2/Al2O3, deposited by simple and low cost sol-gel technology have been studied. The thin films of ZrO2 and Al2O3 were sequentially obtained on Si substrates including spin coating deposition from stable solutions. High resolution scanning electron microscopy (HRSEM) was used to compare the morphology of the nanolaminates. The layers were optically characterized by UV-VIS spectrophotometry. The electrical measurements were carried out on metal-insulator-semiconductor (MIS) structures. Their leakage current and relative permittivity were determined.

引用

页数：4

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