Evaluation of the extraction method of mobility in InGaAs n-MOSFETs

被引：0

作者：

Matsuda, Akihiro ^{[1
]}

Hiroki, Akira ^{[1
]}

Goto, Yuta ^{[1
]}

机构：

[1] Kyoto Inst Technol, Grad Sch Sci & Technol, Kyoto, Japan

来源：

2015 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK) | 2015年

关键词：

inversion layer mobility; InGaAs n-MOSFETs; extraction method;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we evaluate the extraction method of the inversion layer mobility using a drain current analysis model. The model parameters have been extracted from the measured value of the current characteristics of a high mobility InGaAs n-MOSFET. The analysis model has the gate voltage dependence of the channel length modulation coefficient. It is found that the mobility shows within 10 percent accuracy in the range more than 0.8 V. As a result, it is found that this method has a sufficient accuracy for high mobility InGaAs n-MOSFETs

引用

页数：2

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