High-performance 1.3 μm dilute-nitride edge-emitting lasers

被引：2
|
作者：
Dumitrescu, M. [1 ]
Larsson, A. [2 ]
Wei, Y. [2 ]
Larkins, E. [3 ]
Uusimaa, P. [4 ]
Schuiz, K. [5 ]
Pessa, M. [1 ]
机构：
[1] Tampere Univ Technol, Optoelect Res Ctr, FIN-33101 Tampere, Finland
[2] Chalmers, Photon Lab, Gothenburg, Sweden
[3] Univ Nottingham, Nottingham, England
[4] Modulight Inc, Tampere, Finland
[5] MergeOptics GmbH, Berlin, Germany
来源：
CAS 2007 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS | 2007年
关键词：
dilute-nitride; low threshold current; high characteristic temperature; extended operating temperature range; 10 Gb/s large-signal modulation;
D O I：
10.1109/SMICND.2007.4519673
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The paper presents record performances achieved by dilute-nitride edge-emitting lasers developed in the EU-FP6 project FAST ACCESS. Some of the dilute-nitride material particularities together with epitaxial growth, post-growth treatment and laser structure issues are discussed. Record threshold current, slope efficiency, characteristic temperature, small- and large-signal modulation are presented, proving that the dilute-nitride GaInAsN lasers are a solution for low-cost un-cooled transmitters targeting the metropolitan and access area networks.
引用
收藏
页码：165 / +
页数：2
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