Effect of the wetting layer on intensity noise in quantum dot laser

被引:0
|
作者
Hayau, Jean-Francois
Besnard, Pascal
Dehaese, Olivier
Grillot, Frederic
Piron, Rozenn
Loualiche, Slimane
Martinez, Anthony
Merghem, Kamel
Ramdane, Abderrahim
机构
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We show through a simple theoretical formulation and in good agreement with experimental measurements that the wetting layer may increase the relative intensity noise at low frequencies in quantum-dot lasers while modifying the damping rate.
引用
收藏
页数:2
相关论文
共 50 条
  • [41] The influence of strain on electronic structure of InAs/GaAs quantum dot with wetting layer
    Liu, Yumin
    Yu, Zhongyuan
    2007 PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1-4, 2007, : 260 - 261
  • [42] Quantum dot laser optimization: selectively doped layer
    Korenev, Vladimir V.
    Konoplev, Sergey S.
    Savelyev, Artem V.
    Shernyakov, Yurii M.
    Maximov, Mikhail V.
    Zhukov, Alexey E.
    3RD INTERNATIONAL SCHOOL AND CONFERENCE ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES (SAINT PETERSBURG OPEN 2016), 2016, 741
  • [43] Hybridized quantum dot-wetting layer states in photoluminescence of In(Ga)As/GaAs dot chain samples
    Dorogan, V. G.
    Mazur, Yu. I.
    Marega, E., Jr.
    Tarasov, G. G.
    Ware, M. E.
    Salamo, G. J.
    JOURNAL OF APPLIED PHYSICS, 2009, 105 (12)
  • [44] Hybridized quantum dot-wetting layer states in photoluminescence of In(Ga)As/GaAs dot chain samples
    Dorogan, V.G.
    Mazur, Yu.I.
    Marega Jr., E.
    Tarasov, G.G.
    Ware, M.E.
    Salamo, G.J.
    Journal of Applied Physics, 2009, 105 (12):
  • [45] Relative intensity noise of silicon-based quantum dot lasers
    Duan, J.
    Huang, H.
    Jung, D.
    Norman, J. C.
    Bowers, J. E.
    Gritlot, F.
    2019 COMPOUND SEMICONDUCTOR WEEK (CSW), 2019,
  • [46] Relative intensity noise of a quantum well transistor laser
    Tan, F.
    Bambery, R.
    Feng, M.
    Holonyak, N., Jr.
    APPLIED PHYSICS LETTERS, 2012, 101 (15)
  • [47] Ellipsometric study of InAs wetting layer in InAs/GaAs quantum dots at the threshold of quantum dot formation
    Lee, H
    Kim, SM
    Park, YJ
    Kim, EK
    JOURNAL OF APPLIED PHYSICS, 2001, 90 (05) : 2290 - 2295
  • [48] Quantum-mechanical interference between optical transitions: The effect of laser intensity noise
    Camparo, JC
    Lambropoulos, P
    PHYSICAL REVIEW A, 1999, 59 (03): : 2515 - 2517
  • [49] Quantum-mechanical interference between optical transitions: The effect of laser intensity noise
    Camparo, J.C.
    Lambropoulos, P.
    Physical Review A - Atomic, Molecular, and Optical Physics, 1999, 59 (03): : 2515 - 2517
  • [50] Impacts of Wetting Layer and Excited State on the Modulation Response of Quantum-Dot Lasers
    Wang, Cheng
    Grillot, Frederic
    Even, Jacky
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2012, 48 (09) : 1144 - 1150