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- [41] The influence of strain on electronic structure of InAs/GaAs quantum dot with wetting layer 2007 PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1-4, 2007, : 260 - 261
- [42] Quantum dot laser optimization: selectively doped layer 3RD INTERNATIONAL SCHOOL AND CONFERENCE ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES (SAINT PETERSBURG OPEN 2016), 2016, 741
- [44] Hybridized quantum dot-wetting layer states in photoluminescence of In(Ga)As/GaAs dot chain samples Journal of Applied Physics, 2009, 105 (12):
- [45] Relative intensity noise of silicon-based quantum dot lasers 2019 COMPOUND SEMICONDUCTOR WEEK (CSW), 2019,
- [48] Quantum-mechanical interference between optical transitions: The effect of laser intensity noise PHYSICAL REVIEW A, 1999, 59 (03): : 2515 - 2517
- [49] Quantum-mechanical interference between optical transitions: The effect of laser intensity noise Physical Review A - Atomic, Molecular, and Optical Physics, 1999, 59 (03): : 2515 - 2517