Hydrogen incorporation, diffusivity and evolution in bulk ZnO

被引:45
|
作者
Ip, K [1 ]
Overberg, ME
Heo, YW
Norton, DP
Pearton, SJ
Stutz, CE
Kucheyev, SO
Jagadish, C
Williams, JS
Luo, B
Ren, F
Look, DC
Zavada, JM
机构
[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[2] AFRL, MLPS, Wright Patterson AFB, OH 45433 USA
[3] Australian Natl Univ, Dept Elect Mat Engn, Canberra, ACT 0200, Australia
[4] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA
[5] Wright State Univ, Semicond Res Ctr, Dayton, OH 45435 USA
[6] USA, Res Off, Res Triangle Pk, NC 27709 USA
关键词
ZnO; hydrogen; diffusion;
D O I
10.1016/S0038-1101(03)00207-7
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Hydrogen is readily incorporated into bulk, single-crystal ZnO during exposure to plasmas at moderate (100-300degreesC) temperatures. Incorporation depths of >25 mum were obtained in 0.5 h at 300degreesC, producing a diffusivity of similar to8 x 10(-10) cm(2)/V s at this temperature. The activation energy for diffusion is 0.17 +/- 0.12 eV, indicating an interstitial mechanism. Subsequent annealing at 500-600 degreesC is sufficient to evolve all of the hydrogen out of the ZnO, at least to the sensitivity of Secondary Ion Mass Spectrometry (<5 x 10(15) cm(-3)). The thermal stability of hydrogen retention is slightly greater when the hydrogen is incorporated by direct implantation relative to plasma exposure, due to trapping at residual damage. (C) 2003 Elsevier Ltd. All rights reserved.
引用
收藏
页码:2255 / 2259
页数:5
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