Charge recombination in distributed heterostructures of semiconductor discotic and polymeric materials.

被引：19

作者：

Clark, Jenny ^{[1
]}

Archer, Robert ^{[2
]}

Redding, Tim ^{[3
]}

Foden, Clare ^{[2
]}

Tant, Julien ^{[4
]}

Geerts, Yves ^{[4
]}

Friend, Richard H. ^{[3
]}

Silva, Carlos ^{[5
]}

机构：

[1] Politecn Milan, Dipartimento Fis, I-20133 Milan, Italy

[2] Madingley Rise, Cambridge Display Technol, Cambridge CB3 0TX, England

[3] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

[4] Univ Libre Bruxelles, Lab Chim Polymeres, B-1050 Brussels, Belgium

[5] Univ Montreal, Dept Phys & Regrp Quebecois Mat Pointe, Montreal, PQ H3C 3J7, Canada

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 12期

基金：

英国工程与自然科学研究理事会; 加拿大自然科学与工程研究理事会;

关键词：

D O I：

10.1063/1.2938082

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Control of microstructure and energetics at heterojunctions in organic semiconductors is central to achieve high light-emitting or photovoltaic device efficiency. We report the observation of an emissive exciplex formed between an electron-accepting discotic material (hexaazatrinaphthylene or HATNA-SC12) and a hole accepting conjugated polymer {poly[9,9- dioctylfluorene-co-N-(4-butylphenyl)diphenylamine] or TFB}. In contrast to polymer-polymer systems, we find here that the exciplex is strongly localized at the interface, acting as an energy bottleneck with inefficient transfer to bulk exciton states and with low yield of charge separation. (C) 2008 American Institute of Physics.

引用

页数：6

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