Intersubband absorption in GaInNAs/GaAsN quantum wells

被引：0
|
作者：
Fan, WJ [1 ]
Sun, L [1 ]
Yoon, SF [1 ]
Zhang, DH [1 ]
Wang, SZ [1 ]
Mei, T [1 ]
Lee, PL [1 ]
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
来源：
COMMAD 2002 PROCEEDINGS | 2002年
关键词：
D O I：
10.1109/COMMAD.2002.1237288
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Intersubband absorption, high-resolution x-ray diffraction and photoluminescence were investigated in the n-type Ga0.7In0.3N0.01As0.99/GaAs0.998N0.002 quantum wells grown by solid-source molecular beam epitaxy (SSMBE). The bound-to-continuum absorption peaks at around 9.5 mum were observed in both as-grown and in-situ annealed samples. The effective mass theory was also carried out to calculate the intersubband absorption in the GaInNAs/GaAsN QWs. The experimental absorption curve is in good agreement with our calculation result.
引用
收藏
页码：455 / 457
页数：3
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