Intersubband absorption in GaInNAs/GaAsN quantum wells

被引：0

作者：

Fan, WJ ^{[1
]}

Sun, L ^{[1
]}

Yoon, SF ^{[1
]}

Zhang, DH ^{[1
]}

Wang, SZ ^{[1
]}

Mei, T ^{[1
]}

Lee, PL ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

来源：

COMMAD 2002 PROCEEDINGS | 2002年

关键词：

D O I：

10.1109/COMMAD.2002.1237288

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Intersubband absorption, high-resolution x-ray diffraction and photoluminescence were investigated in the n-type Ga0.7In0.3N0.01As0.99/GaAs0.998N0.002 quantum wells grown by solid-source molecular beam epitaxy (SSMBE). The bound-to-continuum absorption peaks at around 9.5 mum were observed in both as-grown and in-situ annealed samples. The effective mass theory was also carried out to calculate the intersubband absorption in the GaInNAs/GaAsN QWs. The experimental absorption curve is in good agreement with our calculation result.

引用

页码：455 / 457

页数：3

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