Quantum metallicity in a two-dimensional insulator

被引:51
|
作者
Butko, VY
Adams, PW [1 ]
机构
[1] Louisiana State Univ, Dept Phys & Astron, Baton Rouge, LA 70803 USA
[2] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
关键词
D O I
10.1038/35051516
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
One of the most far-reaching problems in condensed-matter physics is to understand how interactions between electrons, and the resulting correlations, affect the electronic properties of disordered two-dimensional systems. Extensive experimental (1-6) and theoretical (7-11) studies have shown that interaction effects are enhanced by disorder, and that this generally results in a depletion of the density of electronic states. In the limit of strong disorder, this depletion takes the form of a complete gap(12,13) in the density of states. It is known that this `Coulomb gap' can turn a pure metal film that is highly disordered into a poorly conducting insulator(14), but the properties of these insulators are not well understood. Here we investigate the electronic properties of disordered beryllium films, with the aim of disentangling the effects of the Coulomb gap and the underlying disorder. We show that the gap is suppressed by a magnetic field and that this drives the strongly insulating beryllium films into a low-temperature `quantum metal' phase with resistance near the quantum resistance R-Q = h/e(2), where h is Planck's constant and e is the electron charge.
引用
收藏
页码:161 / 164
页数:5
相关论文
共 50 条
  • [21] Band gap of two-dimensional topological insulator with a double quantum well structure
    Li, Shijie
    Xia, Tongsheng
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2022, 36 (17):
  • [22] Terahertz electron transport in a two-dimensional topological insulator in a HgTe quantum well
    Kvon, Z. D.
    Dantscher, K. M.
    Zoth, C.
    Kozlov, D. A.
    Mikhailov, N. N.
    Dvoretsky, S. A.
    Ganichev, S. D.
    JETP LETTERS, 2014, 99 (05) : 290 - 294
  • [23] Persistence of a Two-Dimensional Topological Insulator State in Wide HgTe Quantum Wells
    Olshanetsky, E. B.
    Kvon, Z. D.
    Gusev, G. M.
    Levin, A. D.
    Raichev, O. E.
    Mikhailov, N. N.
    Dvoretsky, S. A.
    PHYSICAL REVIEW LETTERS, 2015, 114 (12)
  • [24] Quantum dot in a two-dimensional topological insulator: The two-channel Kondo fixed point
    Law, K. T.
    Seng, C. Y.
    Lee, Patrick A.
    Ng, T. K.
    PHYSICAL REVIEW B, 2010, 81 (04):
  • [25] Hybridization Effects of Normal Insulator on Two-Dimensional Topological Insulator
    Shin, Jiseon
    Jeon, Gun Sang
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2019, 74 (01) : 41 - 47
  • [26] Transition to an excitonic insulator from a two-dimensional conventional insulator
    Manousakis, Efstratios
    PHYSICAL REVIEW B, 2023, 107 (07)
  • [27] Hybridization Effects of Normal Insulator on Two-Dimensional Topological Insulator
    Jiseon Shin
    Gun Sang Jeon
    Journal of the Korean Physical Society, 2019, 74 : 41 - 47
  • [28] Thermoelectric transport in two-dimensional topological insulator state based on HgTe quantum well
    Gusev, G. M.
    Raichev, O. E.
    Olshanetsky, E. B.
    Levin, A. D.
    Kvon, Z. D.
    Mikhailov, N. N.
    Dvoretsky, S. A.
    2D MATERIALS, 2019, 6 (01):
  • [29] Edge and Bulk Transport in a Two-Dimensional Topological Insulator Based on a CdHgTe Quantum Well
    M. S. Ryzhkov
    D. A. Khudaiberdiev
    D. A. Kozlov
    Z. D. Kvon
    N. N. Mikhailov
    S. A. Dvoretsky
    JETP Letters, 2022, 115 (4) : 202 - 207
  • [30] The limitimg behaviour of the well width of a quantum two-dimensional metal-insulator transition
    Peter, AJ
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2005, 25 (04): : 569 - 574