Developing the efficient and low-cost electrocatalysts for overall water splitting is of the great importance for the production of H-2. The popular bi-functional catalysts usually shown good activity for one half reaction at expense of the activity for another half-reaction, thus given a moderate performance for overall water splitting. In this paper, we have reported on integrating the active OER (Ni3N) and HER (NiMoN) components as Ni3N-NiMoN heterostructures for the effective overall water splitting. The heterostructures were constructed by the controllable nitridation of the Ni-Mo-O precursor anchored on carbon cloth (CC) under NH3 atmosphere. The micro-structures of the catalyst could be tuned by regulating the surface properties of CC and the calcination temperature. Under optimized condition, the Ni3N-NiMoN catalysts exhibited good catalytic activity for both OER and HER in alkaline electrolyte. The catalysts can achieve a current density of 10 mA cm(-2) at an over-potential of 31 mV for HER, being close to Pt catalyst. Also, it only requiring an overpotential of 277 mV to reach current density of 10 mA cm(-2) for OER. Moreover, the cell assembled by the identical Ni3N-NiMoN as both the cathode and anode needs only a cell voltage of 1.54 V to achieve current density of 10 mA cm(-2). The superior performance of Ni3(N)-NiMoN heterostructures can be ascribed to the following points: 1) the simultaneous presence of active OER and HER components and the promoted action each other in the heterostructures, and 2) the exposure of the abundant active sites in the sheet-like structure assembled by the nanoparticles.
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Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R China
Ye, Zixing
Yu, Daifu
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Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R ChinaZhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R China
Yu, Daifu
Zhang, Ruian
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Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R China
Zhang, Ruian
Qin, Fei
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Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R ChinaZhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R China
Qin, Fei
Sun, Yiran
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Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R China
Sun, Yiran
Huang, Jie
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Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R ChinaZhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R China
Huang, Jie
Zhou, Zhanqi
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Zhejiang Univ, Ctr Electron Microscopy, Sch Mat Sci & Engn, Hangzhou 310027, Peoples R ChinaZhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R China
Zhou, Zhanqi
Tian, He
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Zhejiang Univ, Ctr Electron Microscopy, Sch Mat Sci & Engn, Hangzhou 310027, Peoples R ChinaZhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R China
Tian, He
Han, Gaorong
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Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R China
Han, Gaorong
Ren, Zhaohui
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Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R China
Ren, Zhaohui
Liu, Gang
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Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R ChinaZhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R China
机构:Beijing University of Technology,Center of Excellence for Environmental Safety and Biological Effects, Beijing Key Laboratory for Green Catalysis and Separation, Department of Chemistry and Biology
Xupeng Zong
Wenshuai Jiang
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机构:Beijing University of Technology,Center of Excellence for Environmental Safety and Biological Effects, Beijing Key Laboratory for Green Catalysis and Separation, Department of Chemistry and Biology
Wenshuai Jiang
Zaicheng Sun
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机构:Beijing University of Technology,Center of Excellence for Environmental Safety and Biological Effects, Beijing Key Laboratory for Green Catalysis and Separation, Department of Chemistry and Biology
机构:
Center of Excellence for Environmental Safety and Biological Effects, Beijing Key Laboratory for Green Catalysis and Separation, Department of Chemistry and Biology, Beijing University of TechnologyCenter of Excellence for Environmental Safety and Biological Effects, Beijing Key Laboratory for Green Catalysis and Separation, Department of Chemistry and Biology, Beijing University of Technology
Xupeng Zong
Wenshuai Jiang
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Center of Excellence for Environmental Safety and Biological Effects, Beijing Key Laboratory for Green Catalysis and Separation, Department of Chemistry and Biology, Beijing University of TechnologyCenter of Excellence for Environmental Safety and Biological Effects, Beijing Key Laboratory for Green Catalysis and Separation, Department of Chemistry and Biology, Beijing University of Technology
Wenshuai Jiang
Zaicheng Sun
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Center of Excellence for Environmental Safety and Biological Effects, Beijing Key Laboratory for Green Catalysis and Separation, Department of Chemistry and Biology, Beijing University of TechnologyCenter of Excellence for Environmental Safety and Biological Effects, Beijing Key Laboratory for Green Catalysis and Separation, Department of Chemistry and Biology, Beijing University of Technology