Optical isolation in silicon waveguides based on nonreciprocal Raman amplification

被引：60
|
作者：
Krause, M. [1 ]
Renner, H. [1 ]
Brinkmeyer, E. [1 ]
机构：
[1] Tech Univ Hamburg, D-21073 Hamburg, Germany
来源：
ELECTRONICS LETTERS | 2008年 / 44卷 / 11期
关键词：
D O I：
10.1049/el:20080791
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The longitudinal mode-field components in strongly confining crystalline-silicon waveguides cause a forward-backward asymmetry of the stimulated Raman effect. This nonreciprocity can be used to realise isolators with dynamically reconfigurable isolation direction.
引用
收藏
页码：691 / U46
页数：2
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