Design and fabrication of photo-sensitive thin-film transistors with IGZO and organic photo-absorber

被引：0
|
作者：
Wang, Zhaogui [1 ,2 ]
Zheng, Yongfeng [1 ,2 ]
Cao, Xuhong [1 ,2 ]
Zhou, Hang [3 ]
Liu, Chuan [1 ,2 ]
机构：
[1] Sun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R China
[2] Sun Yat Sen Univ, Sch Elect & Informat Technol, Guangdong Prov Key Lab Display Mat & Technol, Guangzhou 510275, Peoples R China
[3] Peking Univ, Shenzhen Grad Sch, Shenzhen Key Lab Thin Film Transistor & Adv Displ, Shenzhen 518055, Peoples R China
来源：
2018 INTERNATIONAL CONFERENCE ON ELECTRONICS PACKAGING AND IMAPS ALL ASIA CONFERENCE (ICEP-IAAC) | 2018年
关键词：
photo-sensitive; thin-film transistor; IGZO; perovskite; solution processed; PEROVSKITE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents theoretical design and experimental results of photo-sensitive thin-film transistors (TFTs) based on an InGaZnO A layer covered with an organic or perovskite photo-absorber layer. The photo-absorbing layer is of a narrow bandgap and efficiently improves spectral response characteristics in visible light.
引用
收藏
页码：69 / 73
页数：5
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