d carrier induced intrinsic room temperature ferromagnetism in Nb:TiO2 film

被引：84

作者：

Yang, J. Y. ^{[1
]}

Han, Y. L. ^{[1
]}

He, L. ^{[1
]}

Dou, R. F. ^{[1
]}

Xiong, C. M. ^{[1
]}

Nie, J. C. ^{[1
]}

机构：

[1] Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 20期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.4707378

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High crystalline anatase TiO2 and Nb:TiO2 thin films were fabricated on LaAlO3 (100) substrates by pulsed laser deposition. Room temperature ferromagnetism was obtained in Nb:TiO2 but absent in pure TiO2. The Kondo effect and anomalous Hall effect observed in metallic Nb:TiO2 strongly confirmed the existence of exchange interaction between intrinsic local magnetic moments and carriers. High energy resolution x-ray photoelectron spectroscopy studies of the Nb:TiO2 thin film revealed clear signals of Ti3+ and Nb4+ ions, which had one unpaired d electron responsible for the local magnetic moments. This result consisted quite well with the spin polarized first principle calculation. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4707378]

引用

页数：4

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