Superior n-MOSFET performance by optimal stress design

被引：2
|
作者：
Yang, Y. J. [1 ]
Liao, M. H. [1 ]
Liu, C. W. [1 ]
Yeh, Lingyen [2 ]
Lee, T. -L [2 ]
Liang, M. -S. [2 ]
机构：
[1] Natl Taiwan Univ, Dept Elect Engn, Grad Inst Photon & Optoelect, Taipei 10764, Taiwan
[2] Taiwan Semiconductor Manufacturing Co Ltd, Taiwa, Miyagi, Japan
来源：
2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2 | 2007年
关键词：
D O I：
10.1109/ICEMI.2007.4351048
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：3 / +
页数：2
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