Charge sensing properties ofmonolithic CMOS pixel sensors fabricated in a 65 nm technology

被引：4

作者：

Bugiel, Szymon ^{[1
]}

Dorokhov, Andrei ^{[1
]}

Aresti, Mauro ^{[4
]}

Baudot, Jerome ^{[1
]}

Beole, Stefania ^{[8
,9
]}

Besson, Auguste ^{[1
]}

Bugiel, Roma ^{[1
]}

Cecconi, Leonardo ^{[2
]}

Colledani, Claude ^{[1
]}

Deng, Wenjing ^{[2
,10
]}

Di Mauro, Antonello ^{[2
]}

El Bitar, Ziad ^{[1
]}

Goffe, Mathieu ^{[1
]}

Hasenbichler, Jan ^{[2
,13
]}

Hong, Geun Hee ^{[2
,11
]}

Hu-Guo, Christine ^{[1
]}

Jaaskelainen, Kimmo ^{[1
]}

Kluge, Alex ^{[2
]}

Mager, Magnus ^{[2
]}

Marras, Davide ^{[4
]}

de Melo, Joao ^{[2
]}

Munker, Magdalena ^{[2
]}

Pham, Hung ^{[1
]}

Piro, Francesco ^{[2
,12
]}

Reidt, Felix ^{[2
]}

Rinella, Gianluca Aglieri ^{[2
]}

Russo, Roberto ^{[7
]}

Sarritzu, Valerio ^{[3
,4
]}

Senyukov, Serhiy ^{[1
]}

Snoeys, Walter ^{[2
]}

Suljic, Miljenko ^{[2
]}

Usai, Gianluca ^{[3
,4
]}

Valin, Isabelle ^{[1
]}

Winter, Marc ^{[6
]}

Wu, Yitao ^{[1
,5
]}

机构：

[1] Univ Strasbourg, CNRS, IPHC UMR 7178, F-67000 Strasbourg, France

[2] European Org Nucl Res CERN, Meyrin, Switzerland

[3] Univ Cagliari, Cagliari, Italy

[4] Natl Inst Nucl Phys INFN, Cagliari, Italy

[5] Univ Sci & Technol China USTC, Hefei, Anhui, Peoples R China

[6] Univ Paris Saclay, IJCLab, CNRS, IN2P3, F-91405 Orsay, France

[7] Natl Inst Subat Phys NIKHEF, Amsterdam, Netherlands

[8] Univ Turin, Dipartimento Fis Sperimentale, Turin, Italy

[9] Sezione Ist Nazl Fis Nucl, Turin, Italy

[10] Cent China Natl Univ CCNU, Wuhan, Peoples R China

[11] Yonsei Univ, Yonsei, South Korea

[12] Ecole Polytech Fed Lausanne EPFL, Lausanne, Switzerland

[13] Vienna Univ Technol, Vienna, Austria

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2022年 / 1040卷

基金：

欧盟地平线“2020”;

关键词：

Monolithic CMOS pixel sensors; 65nm TPSCo;

D O I：

10.1016/j.nima.2022.167213

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

In this work the initial performance studies of the first small monolithic pixel sensors dedicated to charged particle detection, called CE-65, fabricated in the 65nm TowerJazz Panasonic Semiconductor Company are presented. The tested prototypes comprise matrices of 64 x 32 square analogue-output pixels with a pitch of 15 mu m. Different pixel types explore several sensing node geometries and amplification schemes, which allows for various biasing voltage of the detection layer and hence depletion conditions and electric field shaping. Laboratory tests conducted with a Fe-55 source demonstrated that the CE-65 sensors reach equivalent noise charge in the 15 to 25 e(-) range and excellent charge collection efficiencies. Charge sharing is substantial for standard diodes, but can be largely suppressed by modifying their design. Depletion of the thin sensitive layer saturates at a reverse diode bias of about 5 V.

引用

页数：4

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