Organic light-emitting diodes with magnesium doped CuPc as an efficient electron injection layer
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作者:
Cao Jun-Song
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Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China
Cao Jun-Song
[1
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Guan Min
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Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China
Guan Min
[1
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Cao Guo-Hua
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Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China
Cao Guo-Hua
[1
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Zeng Yi-Ping
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Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China
Zeng Yi-Ping
[1
]
Li Jin-Min
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Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China
Li Jin-Min
[1
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Qin Da-Shan
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Hebei Univ Technol, Inst Polymer Sci & Engn, Tianjin 300130, Peoples R ChinaChinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China
Qin Da-Shan
[2
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机构:
[1] Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China
[2] Hebei Univ Technol, Inst Polymer Sci & Engn, Tianjin 300130, Peoples R China
Bright organic electroluminescent devices are developed using a metal-doped organic layer intervening between the cathode and the emitting layer. The typical device structure is a glass substrate/indium-tin oxide (ITO)/copper phthalocyanine (CuPc)/NN'-bis-(1-naphthl)-diphenyl-1,1'-biphenyl-4,4'-diamine (NPB)/Tris(8-quinolinolato) aluminum(Alq(3))/Mg-doped CuPc/Ag. At a driving voltage of 11 V, the device with a layer of Mg-doped CuPc (1:2 in weight) shows a brightness of 4312 cd/m(2) and a current efficiency of 2.52 cd/A, while the reference device exhibits 514 cd/m(2) and 1.25 cd/A.
机构:
Pohang Univ Sci & Technol POSTECH, Div Adv Mat Sci, Dept Mat Sci & Engn, Pohang 790784, Gyungbuk, South KoreaPohang Univ Sci & Technol POSTECH, Div Adv Mat Sci, Dept Mat Sci & Engn, Pohang 790784, Gyungbuk, South Korea
Kim, Kisoo
Hong, Kihyon
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Pohang Univ Sci & Technol POSTECH, Div Adv Mat Sci, Dept Mat Sci & Engn, Pohang 790784, Gyungbuk, South KoreaPohang Univ Sci & Technol POSTECH, Div Adv Mat Sci, Dept Mat Sci & Engn, Pohang 790784, Gyungbuk, South Korea
Hong, Kihyon
Lee, Illhwan
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Pohang Univ Sci & Technol POSTECH, Div Adv Mat Sci, Dept Mat Sci & Engn, Pohang 790784, Gyungbuk, South KoreaPohang Univ Sci & Technol POSTECH, Div Adv Mat Sci, Dept Mat Sci & Engn, Pohang 790784, Gyungbuk, South Korea
Lee, Illhwan
Kim, Sungjun
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Pohang Univ Sci & Technol POSTECH, Div Adv Mat Sci, Dept Mat Sci & Engn, Pohang 790784, Gyungbuk, South KoreaPohang Univ Sci & Technol POSTECH, Div Adv Mat Sci, Dept Mat Sci & Engn, Pohang 790784, Gyungbuk, South Korea
Kim, Sungjun
Lee, Jong-Lam
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Pohang Univ Sci & Technol POSTECH, Div Adv Mat Sci, Dept Mat Sci & Engn, Pohang 790784, Gyungbuk, South KoreaPohang Univ Sci & Technol POSTECH, Div Adv Mat Sci, Dept Mat Sci & Engn, Pohang 790784, Gyungbuk, South Korea
机构:
Novel Materials Laboratory, Institute of Semiconductors, Chinese Academy of SciencesNovel Materials Laboratory, Institute of Semiconductors, Chinese Academy of Sciences
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机构:
曹峻松
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曾一平
李晋闽
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Novel Materials Laboratory, Institute of Semiconductors, Chinese Academy of SciencesNovel Materials Laboratory, Institute of Semiconductors, Chinese Academy of Sciences