3D-vertical integration of sensors and electronics

被引：8
|
作者：
Lipton, R. [1 ]
机构：
[1] Fermilab Natl Accelerator Lab, Batavia, IL 60510 USA
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2007年 / 579卷 / 02期
关键词：
ILC sensors; pixel detectors; vertical integration; SOI;
D O I：
10.1016/j.nima.2007.05.271
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Technologies are being developed which enable the vertical integration of sensors and electronics as well as multilayer electronic circuits. New thinning and wafer bonding techniques and the formation of small vias between resulting thin layers of electronics enable the design of dense integrated sensor/readout structures. We discuss candidate technologies based on SOI and bulk CMOS. A prototype 3D chip developed at Fermilab that incorporates three tiers of 0.18 mu m CMOS is described. (c) 2007 Published by Elsevier B.V.
引用
收藏
页码：690 / 694
页数：5
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