Optical and Electrical Properties of Ultralong ZnO Nanorod Fabricated from Preheating Hydrothermal Method

被引:1
|
作者
Qiu, Jijun [1 ,2 ]
Li, Xiaomin [2 ]
Wu, Yongqing [1 ]
He, Weizhen [3 ,4 ]
Park, Se-Jeong [3 ,4 ]
Piao, Zhonglie [3 ,4 ]
Kim, Hyung-Kook [1 ,3 ,4 ]
Hwang, Yoon-Hwae [1 ,3 ,4 ]
Zhao, Junliang [5 ]
Wang, Ye [5 ]
Sun, Xiaowei [5 ]
机构
[1] Pusan Natl Univ, RCDAMP, Pusan 609735, South Korea
[2] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China
[3] Pusan Natl Univ, Dept Nano Mat Engn, Miryang 627706, South Korea
[4] Pusan Natl Univ, BK 21 Nano Fusion Technol Div, Miryang 627706, South Korea
[5] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
关键词
ZnO Nanorod; Hydrothermal; Photoluminescence; Field Effect Transistors; ZINC-OXIDE NANOSTRUCTURES; TEMPERATURE-DEPENDENCE; PHOTOLUMINESCENCE; SINGLE; NANOWALLS; GROWTH;
D O I
10.1166/jnn.2011.3203
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Ultralong ZnO nanorod arrays with a length of 10 mu m were synthesized using a preheated hydrothermal-solution precursor, and their optical and electrical properties were studied using photoluminescence (PL) spectra and field effect transistors (FETs). The PL spectra showed ultraviolet, orange, and red emissions and had different temperature dependences with increasing temperature. The high-resolution photoluminescence spectra showed that the ultraviolet (UV) emission had different origins within different temperature ranges. The parameters describing the temperature dependence of the peak position shift, intensity, and full width at half maximum were evaluated using different models. After the fabrication of individual nanorod FETs, the ultralong ZnO NRs showed a clear n-type gate modulation with a typical electron concentration of 10(17) cm(-3) and a typical electron mobility of 35.7 cm(2)/V . s.
引用
收藏
页码:463 / 469
页数:7
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