Effect of H on interface properties of Al2O3/In0.53Ga0.47As

被引：13

作者：

Liu, Zuoguang ^{[1
]}

Cui, Sharon ^{[1
]}

Shekhter, Pini ^{[2
]}

Sun, Xiao ^{[1
]}

Kornblum, Lior ^{[2
]}

Yang, Jie ^{[1
]}

Eizenberg, Moshe ^{[2
]}

Chang-Liao, K. S. ^{[3
]}

Ma, T. P. ^{[1
]}

机构：

[1] Yale Univ, Dept Elect Engn, New Haven, CT 06520 USA

[2] Technion Israel Inst Technol, Dept Mat Engn, IL-32000 Haifa, Israel

[3] Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu 30013, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 22期

基金：

美国国家科学基金会;

关键词：

alumina; energy gap; gallium arsenide; hydrogen; III-V semiconductors; indium compounds; interface states; transmission electron microscopy; tunnelling spectra; X-ray photoelectron spectra; HYDROGEN;

D O I：

10.1063/1.3665395

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report that depositing Al2O3 on InGaAs in an H-containing ambient (e. g., in forming gas) results in significant reduction of interface-trap density and significantly suppressed frequency dispersion of accumulation capacitance. The results of the inelastic electron tunneling spectroscopy study reveal that strong trap features at the Al2O3/InGaAs interface in the InGaAs band gap are largely removed by depositing Al2O3 in an H-containing ambient. Transmission electron microscopy images and x-ray photoelectron spectroscopy data shed some light on the role of hydrogen in improving interface properties of the Al2O3/In0.53Ga0.47As gate stack. (C) 2011 American Institute of Physics. [doi:10.1063/1.3665395]

引用

页数：3

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