Growth of heteroepitaxial ZnO thin films by femtosecond pulsed-laser deposition

ZnO thin films have been grown on various substrates by femtosecond pulsed-laser deposition. According to optical microscopy and atomic force microscopy analyses, the production of droplets is not significant using femtosecond pulses. Smooth, dense, stoichiometric, crystalline, and textured hexagonal ZnO films are epitaxially grown on (0001) sapphire at 700 degreesC with an in-plane epitaxial relationship corresponding to a 30 degrees rotation of the ZnO basal plane with respect to the sapphire. Nevertheless, channeling experiments and rocking curve measurements show that the crystalline quality is not as good as that obtained with nanosecond pulses. (C) 2000 American Institute of Physics. [S0021-8979(00)06624-X].