Macroscopic and microscopic charging effects of Si nanocrystals embedded in a SiO2 layer

被引:0
|
作者
Kim, Jae-Ho
Oh, Do-Hyun
Lee, Soo-Jin
Lee, Kyu-Hwan
Cho, Woon-Jo
Kim, Tae Whan
Park, Young Ju
机构
[1] Hanyang Univ, Adv Semicond Res Ctr, Div Elect & Comp Engn, Seoul 133791, South Korea
[2] Korea Adv Inst Sci & Technol, Future Res Div, Seoul 136791, South Korea
[3] MIT, Francis Bitter Magnet Lab, Cambridge, MA 02139 USA
关键词
nanostructures; nanomaterials; semiconducting silicon;
D O I
10.1016/j.jcrysgro.2007.08.031
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Capacitance-voltage (C-P) and electrostatic force microscopy (EFM) measurements on Si nanocrystals (Si-NCs) formed by using the sonochemical method were carried out to investigate the charging effects of the Si-NCs. Transmission electron microscopy images and atomic force microscopy images showed that the Si-NCs were created inside the SiO2 layer. The C-V curve and the EFM image showed that the Si-NCs embedded in the SiO2 layer experienced charging effects. The macroscopic surface charge density determined from the C-V curve was in reasonable agreement with the microscopic local value obtained from the EFM image. The present results indicate that the EFM technique might provide a promising method for investigating charging effects in various kinds of nanocrystals embedded in the insulating layer. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:278 / 282
页数:5
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