High-Q spiral inductors for high performance integrated RF front-end sub-systems

被引：0
|
作者：
Pieters, P [1 ]
Vaesen, K [1 ]
Carchon, G [1 ]
Brebels, S [1 ]
De Raedt, W [1 ]
Beyne, E [1 ]
Mertens, RP [1 ]
机构：
[1] CS2, Zaventem, Belgium
来源：
2000 INTERNATIONAL SYMPOSIUM ON MICROELECTRONICS | 2000年 / 4339卷
关键词：
spiral inductors; thin film multilayer technology; MCM-D; RF front-end; wireless;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Wireless telecommunication systems are moving rapidly to broadband applications at high frequencies. ntis evolution poses severe requirement on the miniaturization technologies and components used to realize the RF front-end of these systems. Inductors remain essential components in these miniature RF front-ends. In this paper, high-e spiral inductors integrated in thin film multilayer MCM-D technology are discussed. Using examples of voltage controlled oscillators, filters and a rat race circuit, the impact of the inductor quality on the performance and power consumption in front-end (sub)systems is analyzed. In addition, the relation with cost is indicated. From the discussed examples, it is clear that high-e inductors are essential to achieve a high performance in a miniature RF front-end system at an acceptable cost.
引用
收藏
页码：500 / 505
页数：6
相关论文
共 50 条
  • [41] High Performance Analog Front-End for Digital Spectroscopy
    Abba, Andrea
    Manenti, Antonio
    Caponio, Francesco
    Geraci, Angelo
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2010, 57 (04) : 2173 - 2177
  • [42] High performance RF front-end circuits for CDMA receivers utilizing BiCMOS and copper technologies
    Watanabe, G
    Lau, H
    Schiltz, T
    Dozier, C
    Denig, C
    Fu, H
    RAWCON2000: 2000 IEEE RADIO AND WIRELESS CONFERENCE, PROCEEDINGS, 2000, : 211 - 214
  • [43] A wideband high-linearity RF receiver front-end in CMOS
    Arkesteijn, VJ
    Klumperink, EAM
    Nauta, B
    ESSCIRC 2004: PROCEEDINGS OF THE 30TH EUROPEAN SOLID-STATE CIRCUITS CONFERENCE, 2004, : 71 - 74
  • [44] Design and fabrication of deep submicron CMOS technology compatible suspended high-Q spiral inductors
    Hsieh, MC
    Fang, YK
    Chen, CH
    Chen, SM
    Yeh, WK
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (03) : 324 - 331
  • [45] High-Q Variable Pitch Spiral Inductors for Increased Inductance Density and Figure-of-Merit
    Tayenjam, Sobhana
    Vanukuru, Venkata
    Sundaram, Kumaravel
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 66 (10) : 4481 - 4485
  • [46] High-Q poly-to-poly capacitor for RF integrated circuits
    Lee, SG
    Lee, JT
    Choi, JK
    ELECTRONICS LETTERS, 2001, 37 (01) : 25 - 26
  • [47] High-Q above-IC inductors and transmission lines - Compairison to Cu back-end performance
    Carchon, GJ
    Sun, X
    De Raedt, W
    54TH ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE, VOLS 1 AND 2, PROCEEDINGS, 2004, : 1118 - 1123
  • [48] Very high-Q inductors using RF-MEMS technology for System-On-Package wireless communication integrated module
    Pinel, S
    Cros, F
    Nuttinck, S
    Yoon, SW
    Allen, MG
    Laskar, J
    2003 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2003, : 1497 - 1500
  • [49] Flip-chip based 3-D high-Q integrated inductors
    Gong, JF
    Chan, PCH
    54TH ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE, VOLS 1 AND 2, PROCEEDINGS, 2004, : 1095 - 1100
  • [50] An experimental, ultra-high-Q, VHF receiver front-end
    Kuhn, WB
    ElshabiniRiad, A
    Stephenson, FW
    ISCAS 96: 1996 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS - CIRCUITS AND SYSTEMS CONNECTING THE WORLD, VOL 1, 1996, : 353 - 356
12345