Characterization of polycrystalline 3C-SiC films deposited from the precursors 1,3-disilabutane and dichlorosilane

被引：21

作者：

Roper, Christopher S. ^{[1
,2
]}

Radmilovic, Velimir ^{[3
]}

Howe, Roger T. ^{[4
]}

Maboudian, Roya ^{[1
,2
]}

机构：

[1] Univ Calif Berkeley, Berkeley Sensor & Actuator Ctr, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Dept Chem Engn, Berkeley, CA 94720 USA

[3] Lawrence Berkeley Natl Lab, Natl Ctr Electron Microscopy, Berkeley, CA 94720 USA

[4] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 08期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2907871

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Polycrystalline 3C-SiC thin films are deposited via low pressure chemical vapor deposition from the precursors 1,3-disilabutane (DSB) and dichlorosilane (DCS). Elemental composition, microstructure, surface morphology, and residual stress are characterized as functions of DCS flow rate fraction. Elemental composition varies linearly with DCS fraction, while microstructure changes drastically with slight changes in DCS fraction. Residual stress varies from 1.2 GPa tensile to 240 MPa tensile, and the causes of which are traced to variations in elemental composition and grain size. A model of residual stress accounting for the effects of elemental composition and grain size on intrinsic stress is developed and found to be in reasonable agreement with experimental data. (c) 2008 American Institute of Physics.

引用

页数：6

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