The Exchange Bias of a Permalloy and Ordered Epitaxial IrMn Thin Film Prepared From the Growth of Ultrathin [Ir/Mn] Multilayer

被引:4
|
作者
Lee, Chih-Hao [1 ,2 ]
Chang, Chia-Jui [3 ]
Lee, Ming-Hong [1 ]
Lin, Yu-Chang [1 ]
Huang, J. C. A. [3 ]
机构
[1] Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu 30013, Taiwan
[2] Natl Synchrotron Radiat Res Ctr, Hsinchu 30077, Taiwan
[3] Natl Cheng Kung Univ, Dept Phys, Tainan 70010, Taiwan
关键词
Exchange bias; magnetic thin films; molecular beam epitaxy; x-ray diffraction; ANISOTROPY; BILAYERS; TEMPERATURE; PHASE;
D O I
10.1109/TMAG.2011.2160333
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The influence of Ir(1-x)Mn(x) composition and post-annealing on structure and exchange bias of epitaxial Ir(1-x)Mn(x)(similar to 10 nm)/Ni(80)Fe(20) (7 nm) films were studied. The Ir(1-x)Mn(x) layer was prepared by MBE growth of [Mn(0.4 nm < X nm < 0.7 nm)/Ir(0.2 nm)](N) multilayer films. The optimal H(ex) increases to similar to 190 Oe after annealing at 533 K for 3 h. X-ray diffraction indicates that the strength of exchange bias is increased with the order parameter of Ir(1-x)Mn(x) alloy.
引用
收藏
页码:3497 / 3500
页数:4
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