Ultrafast Atomic Diffusion Inducing a Reversible (2√3x2√3)R30° ⇆ (√3x√3)R30° Transition on Sn/Si(111) : B

被引:7
|
作者
Srour, W. [1 ,2 ]
Trabada, Daniel G. [3 ,4 ]
Martinez, J. I. [3 ,4 ]
Flores, F. [3 ,4 ]
Ortega, J. [3 ,4 ]
Abuin, M. [5 ]
Fagot-Revurat, Y. [1 ]
Kierren, B. [1 ]
Taleb-Ibrahimi, A. [6 ]
Malterre, D. [1 ]
Tejeda, A. [2 ,7 ]
机构
[1] Univ Lorraine, CNRS, Inst Jean Lamour, F-54506 Vandoeuvre Les Nancy, France
[2] Synchrotron SOLEIL, Orme Merisiers, F-91192 Gif Sur Yvette, France
[3] Univ Autonoma Madrid, Dept Fis Teor Mat Condensada, E-28049 Madrid, Spain
[4] Univ Autonoma Madrid, Condensed Matter Phys Ctr IFIMAC, E-28049 Madrid, Spain
[5] Univ Complutense Madrid, Dept Fis Mat, E-28040 Madrid, Spain
[6] Synchrotron SOLEIL, CNRS, UR1, F-91192 Gif Sur Yvette, France
[7] Univ Paris 11, CNRS, Phys Solides Lab, UMR 8502, F-91405 Orsay, France
关键词
CHARGE-DENSITY-WAVE; PHASE-TRANSITION; SUPERCONDUCTIVITY; ORDER; METAL;
D O I
10.1103/PhysRevLett.114.196101
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Dynamical phase transitions are a challenge to identify experimentally and describe theoretically. Here, we study a new reconstruction of Sn on silicon and observe a reversible transition where the surface unit cell divides its area by a factor of 4 at 250 degrees C. This phase transition is explained by the 24-fold degeneracy of the ground state and a novel diffusive mechanism, where four Sn atoms arranged in a snakelike cluster wiggle at the surface exploring collectively the different quantum mechanical ground states.
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页数:5
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