Molecular beam epitaxy of GaN (0001) under hydrogen

被引：0

作者：

Einfeldt, S ^{[1
]}

Kruse, C ^{[1
]}

Figge, S ^{[1
]}

Hommel, D ^{[1
]}

机构：

[1] Univ Bremen, Inst Solid State Phys, D-28334 Bremen, Germany

来源：

PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS | 2000年 / 1卷

关键词：

hydrogen; surfactant; gallium nitride; surface diffusion;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The impact of atomic hydrogen on the growth of GaN (0001) by molecular beam epitaxy is investigated by electron diffraction, atomic force microscopy and X-ray photoelectron spectroscopy. Exposing the GaN surface to hydrogen is found to reduce the sticking of gallium and to slow down the surface recovery after the deposition of gallium. Whereas a smooth surface was obtained for gallium-rich growth without hydrogen, a roughening was observed when hydrogen is used. In parallel, a peak broadening in spectra of gallium and nitrogen core levels is found. The results are attributed to the formation of stable hydrogen bonds on the GaN surface which impede the surface diffusion of gallium and make hydrogen an anti-surfactant.

引用

页码：170 / 173

页数：4

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