Magnetic properties of MnP nanowhiskers grown by MBE

被引:6
|
作者
Bouravleuv, Alexei D. [1 ,5 ]
Mitani, Seiji [2 ]
Rubinger, Rero M. [3 ,4 ,6 ]
do Carmo, Maria Celeste [3 ,4 ]
Sobolev, Nikolai A. [3 ,4 ]
Ishibashi, Takayuki [1 ]
Koukitu, Akinori [1 ]
Takanashi, Koki [2 ]
Sato, Katsuaki [1 ]
机构
[1] Tokyo Univ Agr & Technol, Grad Sch Engn, Tokyo 1848588, Japan
[2] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9828577, Japan
[3] Univ Aveiro, I3N, P-3810193 Aveiro, Portugal
[4] Univ Aveiro, Dept Fis, P-3810193 Aveiro, Portugal
[5] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[6] DFQ UNIFEI, BR-37500000 Itajuba, Brazil
来源
基金
日本学术振兴会;
关键词
nanowhiskers; molecular beam epitaxy; magnetic properties;
D O I
10.1016/j.physe.2007.09.166
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
MnP nanowhiskers have been grown by molecular beam epitaxy technique on the InP(100) surface. The measurements of the magnetization revealed that samples with MnP nanowhiskers exhibit ferromagnetic behavior up to room temperature. The investigation of temperature and angular dependences of ferromagnetic resonance has shown the existence of 90 degrees anisotropy. The high values of coercive field and peak temperature obtained for the samples make it possible to consider such materials for potential applications in spintronic devices. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:2037 / 2039
页数:3
相关论文
共 50 条
  • [41] Photoluminescence properties of SnO2 nanowhiskers grown by thermal evaporation
    Luo, S. H.
    Wan, Q.
    Liu, W. L.
    Zhang, M.
    Song, Z. T.
    Lin, C. L.
    Chu, Paul K.
    PROGRESS IN SOLID STATE CHEMISTRY, 2005, 33 (2-4) : 287 - 292
  • [42] Transport properties of MBE grown cuprates spin ladders
    Universite Paris 12, Paris, France
    Phys C Supercond, pt 1 (162-165):
  • [43] Optical properties of ZnSe on GaN (0001) grown by MBE
    Ichinohe, Y.
    Kyoh, K.
    Honma, K.
    Sawada, T.
    Suzuki, K.
    Kimura, No.
    Kimura, Na.
    Imai, K.
    JOURNAL OF CRYSTAL GROWTH, 2009, 311 (07) : 2106 - 2108
  • [44] Optical properties of III nitrides grown by reactive MBE
    Morkoc, H
    1996 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES, PROCEEDINGS, 1996, : 365 - 373
  • [45] DOPING PROPERTIES OF GE ON GAAS (100) GROWN BY MBE
    KAWANAKA, M
    SONE, J
    JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) : 421 - 424
  • [46] Structural and transport properties of InN grown on GaN by MBE
    Wang, Kejia
    Kosel, Thomas
    Jena, Debdeep
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6, 2008, 5 (06): : 1811 - 1814
  • [47] Interface properties of MBE grown epitaxial oxides on GaAs
    Contreras-Guerrero, R.
    Edirisooriya, M.
    Noriega, O. C.
    Droopad, R.
    JOURNAL OF CRYSTAL GROWTH, 2013, 378 : 238 - 242
  • [48] Structural properties of cubic MnTe layers grown by MBE
    Janik, E
    Dynowska, E
    BakMisiuk, J
    Leszczynski, M
    Szuszkiewicz, W
    Wojtowicz, T
    Karczewski, G
    Zakrzewski, AK
    Kossut, J
    THIN SOLID FILMS, 1995, 267 (1-2) : 74 - 78
  • [49] Transport properties of MBE grown cuprate Spin Ladders
    Lagues, M
    Laval, JY
    Beuran, CF
    Cavellin, CD
    Eustache, B
    Moussy, JB
    Partiot, C
    Xu, XZ
    PHYSICA C, 1997, 282 : 162 - 165
  • [50] Optical properties of RF-MBE grown AlGaAsN
    Yamamoto, K
    Uchida, M
    Yamamoto, A
    Masuda, A
    Hashimoto, A
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2002, 234 (03): : 915 - 918