Excitonic Mott transition in type-II quantum dots

被引：19
|
作者：
Bansal, Bhavtosh [1 ]
Hayne, M. [1 ,2 ]
Geller, M. [3 ]
Bimberg, D. [3 ]
Moshchalkov, V. V. [1 ]
机构：
[1] Katholieke Univ Leuven, Pulsed Fields Grp, INPAC Inst Nanoscale Phys & Chem, B-3001 Louvain, Belgium
[2] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England
[3] Inst Festkorperphys, D-10623 Berlin, Germany
来源：
PHYSICAL REVIEW B | 2008年 / 77卷 / 24期
基金：
英国工程与自然科学研究理事会;
关键词：
D O I：
10.1103/PhysRevB.77.241304
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Photoluminescence spectra measured on a type-II GaSb/GaAs quantum dot ensemble at high excitation power indicate a Mott transition from the low density state comprising of spatially indirect excitons to a high density electron-plasma state. Under the influence of a very high magnetic field, the electron-plasma that is formed at high excitation powers is transformed into magneto-excitons.
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页数：4
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