Radiation-induced luminescence properties of Ce-doped Mg2SiO4 single crystals

被引：11
|
作者：
Ichiba, Kensei [1 ]
Takebuchi, Yuma [1 ]
Kimura, Hiromi [1 ]
Kato, Takumi [1 ]
Nakauchi, Daisuke [1 ]
Kawaguchi, Noriaki [1 ]
Yanagida, Takayuki [1 ]
机构：
[1] Nara Inst Sci & Technol NAIST, Div Mat Sci, 8976-5 Takayama, Ikoma, Nara 6300192, Japan
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2021年 / 32卷 / 20期
基金：
日本学术振兴会;
关键词：
SCINTILLATION PROPERTIES; STIMULATED LUMINESCENCE; PHOTOLUMINESCENCE PROPERTIES; STORAGE-LUMINESCENCE; DOSIMETER PROPERTIES; THERMOLUMINESCENCE; PHOSPHOR; RADIOLUMINESCENCE; CENTERS; RATIO;
D O I：
10.1007/s10854-021-06962-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We evaluated the photoluminescence (PL), scintillation, and dosimetric properties of Ce-doped Mg2SiO4 single crystals. As the PL and optically-stimulated luminescence (OSL) properties, the Ce-doped Mg2SiO4 showed the emission from 5d to 4f transitions of Ce3+. In the scintillation and thermally-stimulated luminescence (TSL) properties, two emission peaks due to Ce3+ and defect centers were observed. The Ce-doped Mg2SiO4 showed OSL by stimulating at 600 nm and TSL by heating at 50, 160, 195, and 370 degrees C. In OSL, linearly proportional responses were confirmed from 10 mGy for the 0.5 and 1% Ce-doped samples to 100 mGy for the 0.1% Ce-doped sample. In TSL, the undoped and Ce-doped samples had the linearity response from 100 to 0.01 mGy, respectively.
引用
收藏
页码：25065 / 25073
页数：9
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