Mechanisms of Electromigration Damage in Cu Interconnects

被引：0

作者：

Hu, C. -K. ^{[1
]}

Gignac, L. ^{[2
]}

Lian, G. ^{[3
]}

Cabral, C. ^{[2
]}

Motoyama, K. ^{[1
]}

Shobha, H. ^{[1
]}

Demarest, J. ^{[1
]}

Ostrovski, Y. ^{[1
]}

Breslin, C. M. ^{[2
]}

Ali, M. ^{[3
]}

Benedict, J. ^{[3
]}

McLaughlin, P. S. ^{[1
]}

Ni, J. ^{[1
]}

Liu, X. H. ^{[1
]}

机构：

[1] Albany Nanotech, IBM Res, Albany, NY 12203 USA

[2] IBM TJ Watson Res Ctr, Yorktown Hts, NY USA

[3] IBM Syst, Hopewell Jct, NY USA

来源：

2018 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2018年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Mechanisms of electromigration (EM) damage in Cu interconnects through various CMOS nodes are reviewed. Pure Cu and Cu alloy interconnects that were used down to 14 nm node can no longer satisfy the electrical current used for 10 nm node and beyond in high-performance ICs. Cu interconnects with a metal cap should be used. Cu interface diffusivity with EM activation energy of 1.6 eV was found to be the dominate EM factor in Cu lines with a Co liner and cap. The median lifetime of 7 or 10 nm node Cu with TaN/Co liner and Co cap is predicted to be over ten thousand years at 140 degrees C with 1.5x10(7)A/cm(2). However, the resistivity size effect and the difficulty of scaling barrier/liner layer without defects can limit the Cu BEOL roadmap below the 7 nm node.

引用

页数：4

共 50 条

[41] Electromigration of Cu interconnects under AC and DC test conditions
Shaviv, Roey
Harm, Gregory J.
Kumari, Sangita
Keller, Robert R.
Read, David T.
[J]. MICROELECTRONIC ENGINEERING, 2012, 92 : 111 - 114
[42] Effects of Al doping on the electromigration performance of damascene Cu interconnects
Yokogawa, Shinji
Tsuchiya, Hideaki
[J]. JOURNAL OF APPLIED PHYSICS, 2007, 101 (01)
[43] Impact of low k dielectrics on electromigration reliability for Cu interconnects
Ho, PS
Lee, KD
Ogawa, ET
Yoon, S
Lu, X
[J]. MATERIALS, TECHNOLOGY AND RELIABILITY FOR ADVANCED INTERCONNECTS AND LOW-K DIELECTRICS-2003, 2003, 766 : 97 - 106
[44] Threshold electromigration failure time and its statistics for Cu interconnects
Li, Baozhen
Christiansen, Cathryn
Gill, Jason
Sullivan, Timothy
Yashchin, Emmanuel
Filippi, Ronald
[J]. Journal of Applied Physics, 2006, 100 (11):
[45] Microstructural and surface effects on electromigration failure mechanism in Cu interconnects
Gladkikh, A
Karpovski, M
Palevski, A
[J]. MICROELECTRONICS AND RELIABILITY, 1997, 37 (10-11): : 1557 - 1560
[46] Electromigration performance enhancement of Cu interconnects with PVD Ts cap
Gajewski, DA
Meixner, T
Feil, B
Lien, M
Walls, J
[J]. 2004 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 2004, : 627 - 628
[47] The electromigration short-length effect in AlCu and Cu interconnects
Filippi, RG
Wang, PC
Wachnik, RA
Chidambarrao, D
Korhonen, MA
Shaw, TM
Rosenberg, R
Sullivan, TD
[J]. STRESS-INDUCED PHENOMENA IN METALLIZATION, 2002, 612 : 33 - 48
[48] Correlation of electromigration defects in small damascene Cu interconnects with their microstructure
Wendrock, H
Mirpuri, K
Menzel, S
Schindler, G
Wetzig, K
[J]. MICROELECTRONIC ENGINEERING, 2005, 82 (3-4) : 660 - 664
[49] Electromigration reliability of 60 nm dual damascene Cu interconnects
Pyun, J. W.
Baek, W. -C.
Denning, D.
Knorr, A.
Smith, L.
Pfeifer, K.
Ho, P. S.
[J]. PROCEEDINGS OF THE IEEE 2006 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2006, : 107 - +
[50] Electromigration drift and threshold in Cu thin-film interconnects
Frankovic, R
Bernstein, GH
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (12) : 2233 - 2239

← 1 2 3 4 5 →