Simulation Analysis on Thermal Drift of MEMS Resonant Accelerometer

A dual mass and dual double-ended tuning forks (DETF) silicon resonant accelerometer is presented. The low-stress GOS substrate based full-silicon wafer-level fabrication technology and an improved DETF structure are proposed. The position and the size of the anchor have been optimized. The distance between the anchor and the micro leverage structure is set to 1530 mu m. In order to reduce its resonance frequency stability via dimension error, the size should be set above 150 mu m. By optimization of anchor structure, the thermal drift of MEMS Resonant Accelerometer has been decreased to no more than 1Hz. The GOS based full-silicon wafer-level fabrication technology is of great significance for the next generation of guided weapons and future aircraft.