Interface characterization and atomic intermixing processes in Be/W bilayers deposited on Si(001) substrates with Fe buffer layers

被引：10
|
作者：
Kuncser, V. [1 ]
Palade, P. [1 ]
Schinteie, G. [1 ]
Sandu, S. G. [1 ]
Trupina, L. [1 ]
Lungu, G. A. [1 ]
Gheorghe, N. G. [1 ]
Teodorescu, C. M. [1 ]
Porosnicu, C. [2 ]
Jepu, I. [2 ]
Lungu, C. P. [2 ]
Filoti, G. [1 ]
机构：
[1] Natl Inst Mat Phys, Bucharest 077125, Romania
[2] Natl Inst Laser Plasma & Radiat Phys, Bucharest 077125, Romania
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2012年 / 512卷 / 01期
关键词：
PFCs; Be/W bilayers; Atomic inter-diffusion GIXRD; XRR; XPS; CEMS; VACUUM-ARC METHOD; MAGNETIC-PROPERTIES; THIN-FILMS; MOSSBAUER;
D O I：
10.1016/j.jallcom.2011.09.063
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Structural aspects and atomic intermixing processes in Be/W bilayers deposited on Si(0 0 1) substrates with Fe buffer layers enriched in the (57)Fe Mossbauer isotope have been studied via atomic force microscopy, grazing incidence X-ray diffractometry, X-ray reflectometry, X-ray photoelectron spectroscopy and conversion electron Mossbauer spectroscopy. The mentioned investigations allowed a full sequential characterization of the involved interfaces. Various ionic configurations appeared for Fe or W, while an amorphous state was observed in the case of Be. It has been proven that the Be layer has a negative influence on the roughness of the whole structure, which however presents an oxidation gradient from more oxidized elements at the surface towards more reduced elements in deeper layers. A strong diffusion of the W atoms inside the Be layer, induced by the deposition method, as well as of the Fe atoms inside the Be layer, induced by thermal annealing, has been evidenced. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：199 / 206
页数：8
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