Eigen states of valence-band in In0.53Ga0.47As/In0.52Al0.48As multi-quantum wells using transmission spectroscopy

被引：0
|
作者：
Tanaka, K [1 ]
Kotera, N [1 ]
Mishima, T [1 ]
机构：
[1] Hiroshima Univ, Asaminami Ku, Hiroshima 7313194, Japan
来源：
2005 International Conference on Indium Phosphide and Related Materials | 2005年
关键词：
D O I：
暂无
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：419 / 420
页数：2
相关论文
共 50 条
  • [21] Multiple cations interdiffusion in In0.53Ga0.47As/In0.52Al0.48As quantum well
    Chan, Y
    Shiu, WC
    Tsui, WK
    Li, EH
    INFRARED APPLICATIONS OF SEMICONDUCTORS - MATERIALS, PROCESSING AND DEVICES, 1997, 450 : 377 - 382
  • [22] STUDY OF IN0.53GA0.47AS/IN0.52AL0.48AS QUANTUM-WELLS ON INP BY SPECTROSCOPIC ELLIPSOMETRY AND PHOTOLUMINESCENCE
    DINGES, HW
    HILLMER, H
    BURKHARD, H
    LOSCH, R
    NICKEL, H
    SCHLAPP, W
    SURFACE SCIENCE, 1994, 307 : 1057 - 1060
  • [23] Effect of doping at the substrate/buffer layer interface on the Rashba coefficient a in In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As asymmetric quantum wells
    Koga, T
    Nitta, J
    Marcet, S
    TOWARDS THE CONTROLLABLE QUANTUM STATES: MESOSCOPIC SUPERCONDUCTIVITY AND SPINTRONICS, 2003, : 73 - 79
  • [24] Optically detected cyclotron resonance studies of multisubband In0.52Al0.48As/In0.53Ga0.47As quantum wells
    Dai, YT
    Chang, YH
    Lee, TF
    Chen, YF
    Fang, FF
    Wang, WI
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1996, 29 (12) : 3089 - 3095
  • [25] Investigation of filling factor in In0.53Ga0.47As/In0.52Al0.48As quantum wells with two occupied subbands
    Shang Li-Yan
    Lin Tie
    Zhou Wen-Zheng
    Guo Shao-Ling
    Li Dong-Lin
    Gao Hong-Ling
    Cui Li-Jie
    Zeng Yi-Ping
    Chu Jun-Hao
    ACTA PHYSICA SINICA, 2008, 57 (06) : 3818 - 3822
  • [26] ELECTROABSORPTION IN IN0.53GA0.47AS/IN0.52AL0.48AS ASYMMETRIC COUPLED QUANTUM WELLS GROWN ON INP SUBSTRATES
    LEAVITT, RP
    LITTLE, JW
    HORST, SC
    PHYSICAL REVIEW B, 1989, 40 (06): : 4183 - 4186
  • [27] Electron transport properties of In0.53Ga0.47As/In0.52Al0.48As quantum wells with two occupied subbands
    Li-Yan, Shang
    Tie, Lin
    Wen-Zheng, Zhou
    Zhi-Ming, Huang
    Dong-Lin, Li
    Hong-Ling, Gao
    Li-Jie, Cui
    Yi-Ping, Zeng
    Shao-Ling, Gun
    Jun-Hao, Chu
    ACTA PHYSICA SINICA, 2008, 57 (04) : 2481 - 2485
  • [28] INTERDIFFUSION AND WAVELENGTH MODIFICATION IN IN0.53GA0.47AS/IN0.52AL0.48AS QUANTUM-WELLS BY LAMP ANNEALING
    SEO, KS
    BHATTACHARYA, PK
    KOTHIYAL, GP
    HONG, S
    APPLIED PHYSICS LETTERS, 1986, 49 (15) : 966 - 968
  • [29] Optically detected cyclotron resonance studies of multisubband In0.52Al0.48As/In0.53Ga0.47As quantum wells
    Natl Taiwan Univ, Taipei, Taiwan
    J Phys D, 12 (3089-3095):
  • [30] Electron-phonon interaction studies in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well structure
    Prasad, C
    Ferry, DK
    Vasileska, D
    Wieder, HH
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2003, 19 (1-2): : 215 - 220
12345