Ordered Mn-diluted Au/Si(111) reconstructions

被引:3
|
作者
Denisov, N. V. [1 ]
Yakovlev, A. A. [1 ]
Utas, O. A. [1 ]
Azatyan, S. G. [1 ]
Zotov, A. V. [1 ,2 ,3 ]
Saranin, A. A. [1 ,2 ]
Romashev, L. N. [4 ]
Solin, N. I.
Ustinov, V. V.
机构
[1] Inst Automat & Control Proc, Vladivostok 690041, Russia
[2] Far Eastern State Univ, Fac Phys & Engn, Vladivostok 690000, Russia
[3] Vladivostok State Univ Econ & Serv, Dept Elect, Vladivostok 690600, Russia
[4] Inst Met Phys, Ekaterinburg 620990, Russia
基金
俄罗斯基础研究基金会;
关键词
Atom-solid interactions; Silicon; Gold; Indium; Surface structure; morphology; roughness; and topography; Scanning tunneling microscopy (STM); Low energy electron diffraction (LEED); ELECTRONIC-STRUCTURE; PHASE-TRANSITIONS; SI(111) SURFACE; SEMICONDUCTOR; SPINTRONICS; CLUSTERS; AU;
D O I
10.1016/j.susc.2011.09.008
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Using scanning tunneling microscopy, effects produced by adsorption of less than 0.1 monolayer of Mn on Au/Si(111) reconstructions have been studied. It has been found that small amounts of Mn eliminate the original 5 x 2-Au and alpha-root 3 x root 3-Au reconstructions and initiate formation of new ordered structures 8 x 2, 10 x 2, and 2 root 21 x 2 root 21R +/- 10.9 degrees, which are essentially the Au/Si(111) reconstructions with dilute Mn. The Mn concentration in these structures is as small as one or two Mn atoms per unit cell, i.e., it varies from 0.012 to 0.1 ML of Mn. Scanning tunneling spectroscopy has demonstrated that the 2 root 21 x 2 root 21 is plausibly metallic, while the 8 x 2 and 10 x 2 are semiconducting. The latter reconstructions can be considered as possible prototypes for the low-dimensional dilute magnetic semiconductors. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:104 / 109
页数:6
相关论文
共 50 条
  • [21] The growth of an ordered Mn layer on the Si(111)-1 x 1-Ho surface
    Reakes, Michael B.
    Eames, Chris
    Tear, Steve P.
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2009, 21 (26)
  • [22] Surface reconstructions in two and three dimensions: In on Si(111)
    Pavlovska, A
    Bauer, E
    [J]. SURFACE AND INTERFACE ANALYSIS, 2005, 37 (02) : 110 - 114
  • [23] Sm-induced reconstructions on Si(111) surface
    Ehret, E
    Palmino, F
    Mansour, L
    Duverger, E
    Labrune, JC
    [J]. SURFACE SCIENCE, 2004, 569 (1-3) : 23 - 32
  • [24] STM STUDY OF SURFACE RECONSTRUCTIONS OF SI(111)B
    SHEN, TC
    WANG, C
    LYDING, JW
    TUCKER, JR
    [J]. PHYSICAL REVIEW B, 1994, 50 (11): : 7453 - 7460
  • [25] Cerium-induced reconstructions on the Si(111) surface
    Rad, MG
    Göthelid, M
    Le Lay, G
    Karlsson, UO
    [J]. SURFACE SCIENCE, 2004, 558 (1-3) : 49 - 56
  • [26] Modulated C60 monolayers on Si(111)√3x√3-Au reconstructions
    Matetskiy, A. V.
    Gruznev, D. V.
    Zotov, A. V.
    Saranin, A. A.
    [J]. PHYSICAL REVIEW B, 2011, 83 (19):
  • [27] Effect of ultrathin C60 fullerene films on the surface conductivity of a Si(111) substrate with ordered adsorbate reconstructions
    Tsukanov D.A.
    Ryzhkova M.V.
    Borisenko E.A.
    Ivanchenko M.V.
    [J]. Journal of Surface Investigation, 2016, 10 (04): : 864 - 867
  • [28] Au-Si bonding on Si(111) surfaces
    Murayama, M
    Nakayama, T
    Natori, A
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (12): : 6976 - 6979
  • [29] Structure of magnetically ordered Si:Mn
    Bak-Misiuk, J.
    Dynowska, E.
    Romanowski, P.
    Shalimov, A.
    Misiuk, A.
    Kret, S.
    Dluzewski, P.
    Domagala, J.
    Caliebe, W.
    Dabrowski, J.
    Prujszczyk, M.
    [J]. GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XII, 2008, 131-133 : 327 - 331
  • [30] SURFACE-STATES OF ORDERED AU, AG, AND CU OVERLAYERS ON SI(111) STUDIED BY INVERSE PHOTOEMISSION
    NICHOLLS, JM
    SALVAN, F
    REIHL, B
    [J]. PHYSICAL REVIEW B, 1986, 34 (04): : 2945 - 2948