Coherent Control of Nanoscale Ballistic Currents in Transition Metal Dichalcogenide ReS2

被引:27
|
作者
Cui, Qiannan [1 ]
Zhao, Hui [1 ]
机构
[1] Univ Kansas, Dept Phys & Astron, Lawrence, KS 66045 USA
基金
美国国家科学基金会;
关键词
transition metal dichalcogenides; ReS2; ballistic; transport; coherent; control; quantum interference; charge transport; FIELD-EFFECT TRANSISTORS; MONOLAYER MOS2; TEMPERATURE-DEPENDENCE; VALLEY POLARIZATION; INTEGRATED-CIRCUITS; PHOTOCURRENT; ANISOTROPY; TRANSPORT; STATES;
D O I
10.1021/acsnano.5b01111
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Transition metal dichalcogenides are predicted to outperform traditional semiconductors in ballistic devices with nanoscale channel lengths. So far, experimental studies on charge transport in transition metal dichalcogenides are limited to the diffusive regime. Here we show, using ReS2 as an example, all-optical injection, detection, and coherent control of ballistic currents. By utilizing quantum interference between one-photon and two-photon interband transition pathways, ballistic currents are injected in ReS2 thin film samples by a pair of femtosecond laser pulses. We find that the current decays on an ultrafast time scale, resulting in an electron transport of only a fraction of one nanometer. Following the relaxation of the initially injected momentum, backward motion of the electrons for about 1 ps is observed, driven by the Coulomb force from the oppositely moved holes. We also show that the injected current can be controlled by the phase of the laser pulses. These results demonstrate a new platform to study ballistic transport of nonequilibrium carriers in transition metal dichalcogenides.
引用
收藏
页码:3935 / 3941
页数:7
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